The New Type High-power Semiconductor Switching Device——IGCT and Its Application Prospects in Coal Mine

CUI Jian-ming

Article Contents

Article Navigation > Journal of Mine Automation > 2001 > 27(6): 14-16

CUI Jian-ming. The New Type High-power Semiconductor Switching Device——IGCT and Its Application Prospects in Coal Mine[J]. Industry and Mine Automation, 2001, 27(6): 14-16.

Citation:

CUI Jian-ming. The New Type High-power Semiconductor Switching Device——IGCT and Its Application Prospects in Coal Mine[J]. Industry and Mine Automation, 2001, 27(6): 14-16.

CUI Jian-ming. The New Type High-power Semiconductor Switching Device——IGCT and Its Application Prospects in Coal Mine[J]. Industry and Mine Automation, 2001, 27(6): 14-16.

Citation:

CUI Jian-ming. The New Type High-power Semiconductor Switching Device——IGCT and Its Application Prospects in Coal Mine[J]. Industry and Mine Automation, 2001, 27(6): 14-16.

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The New Type High-power Semiconductor Switching Device——IGCT and Its Application Prospects in Coal Mine

CUI Jian-ming

College of Electrical and Power Engineering, Taiyuan Technology University, Taiyuan 030024, China

Publish Date: 2001-12-10

Abstract

Abstract

IGCT is a kind of new and ideal semiconductor switching device with medium voltage and high power. It has many advantages such as high voltage, high current, low flow losing, high switching frequency and easy series connection. So it is suitable for medium voltage inverters, with wide application prospects in coal mine.
- coal mine,
- semiconductor,
- switch,
- application,
- IGCT